SPN9926B Datasheet, SYNC POWER

* 20V/6.0A,RDS(ON)=33mΩ@VGS=4.5V
* 20V/5.0A,RDS(ON)=38mΩ@VGS=2.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance a.

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Lo.

The SPN9926B is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices ar.